tsm 1nb60s 600v n-channel power mosfet 1/6 version: a12 to - 92 product summary v ds (v) r ds(on) ( ? ) i d (a) 600 10 @ v gs =10v 0.25 general description the TSM1NB60S n-channel power mosfet is produced by new advance planar process. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching pe rformance, and withstand high energy pulse in the avalanche an d commutation mode. features low r ds(on) 8 ? (typ.) low gate charge typical @ 6.1nc (typ.) low crss typical @ 4.2pf (typ.) ordering information part no. package packing TSM1NB60Sct b0 to-92 1kpcs / bulk TSM1NB60Sct b0g to-92 1kpcs / bulk TSM1NB60Sct a3 to-92 2kpcs / ammo TSM1NB60Sct a3g to-92 2kpcs / ammo note: g denotes for halogen free absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current tc=25oc i d 0.5 a tc=100oc 0.25 a pulsed drain current * i dm 2 a single pulse avalanche energy (note 2) e as 5 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns total power dissipation @ t c = 25 o c p tot 2.5 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c note: limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to lead r ? jl 50 o c/w thermal resistance - junction to ambient r ? ja 110 o c/w block diagram n-channel mosfet pin definition : 1. gate 2. drain 3. source
tsm 1nb60s 600v n-channel power mosfet 2/6 version: a12 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 600 -- -- v drain-source on-state resistance v gs = 10v, i d = 0.25a r ds(on) -- 8 10 ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.5 3.5 4.5 v zero gate voltage drain current v ds = 600v, v gs = 0v i dss -- -- 10 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transfer conductance v ds = 10v, i d = 0.5a g fs -- 0.8 -- s dynamic total gate charge v ds = 480v, i d = 0.5a, v gs = 10v (note 4,5) q g -- 6.1 -- nc gate-source charge q gs -- 1.4 -- gate-drain charge q gd -- 3.3 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 138 -- pf output capacitance c oss -- 17.1 -- reverse transfer capacitance c rss -- 4.2 -- switching turn-on delay time v gs = 10v, i d = 0.5a, v dd = 300v, r g =25 ? (note 4,5) t d(on) -- 7.7 -- ns turn-on rise time t r -- 6.8 -- turn-off delay time t d(off) -- 15.3 -- turn-off fall time t f -- 14.9 -- source-drain diode ratings and characteristic source current integral reverse diode in the mosfet i s -- -- 0.5 a source current (pulse) i sm -- -- 2 a diode forward voltage i s = 0.5a, v gs = 0v v sd -- 0.9 1.4 v note 1: repetitive rating: pulse width limited by maximum junction temperature note 2: v dd = 50v, i as =0.5a, l=10mh, r g =25 ? , starting t j =25oc note 3: i sd 0.5a, di/dt 200a/us, v dd bv dss , starting t j =25oc note 4: pulse test: pulse width 300us, duty cycle 2% note 5: essentially independent of operating temperature
tsm 1nb60s 600v n-channel power mosfet 3/6 version: a12 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 1nb60s 600v n-channel power mosfet 4/6 version: a12 diode reverse recovery time test circuit & waveform
tsm 1nb60s 600v n-channel power mosfet 5/6 version: a12 to-92 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-92 dimension dim millimeters inches min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 13.53 (typ) 0.532 (typ) d 0.39 0.49 0.015 0.019 e 1.18 1.28 0.046 0.050 f 3.30 3.70 0.130 0.146 g 1.27 1.31 0.050 0.051 h 0.33 0.43 0.013 0.017
tsm 1nb60s 600v n-channel power mosfet 6/6 version: a12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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